2SB1118

Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)15V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)500mA VCE=(–)10V, IC=(–)50mA * ; The 2SB1118/2SD1618 are classified by 50mA hFE as follows : 140 S 280 200 T 400 280 U 560 Marking 2SB1118 : BA 2SD1618 : DA hFE rank : S, T, U E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Ratings (–)20 (–)15 (–)5 (–)0.7 (–)1.5 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Ratings min typ 140* 60 250 max (–)0.1 (–)0.1 560* Unit µA µA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high level...