SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1105
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1105
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1605 APPLICATIONS ·Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -3 30 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector-emitter saturation
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Collector cut-off current DC current gain Diode forward
voltage CONDITIONS IC=-25mA, RBE=< IE=-50mA, IC=0 IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA VCB=-120V, IE=0 VCE=-100V, RBE=< IC=-1.5A ; VCE=-3V ID=-3A 1000 MIN -120 -7
2SB1105
SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD
TYP.
MAX
UNIT V V
-1.5 -3.0 -2.0 -3.5 -100 -10
V V V V µA µA...