isc Silicon PNP Darlington Power Transistor
2SB1102
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1602 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifiers ap...
