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2SB1098 Datasheet

Part Number 2SB1098
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1098 Datasheet2SB1098 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low speed switching industrial ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-B.

  2SB1098   2SB1098






Part Number 2SB1098
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1098 Datasheet2SB1098 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION ·With TO-220F package ·Complement to type 2SD1589 ·DARLINGTON ·High DC current gain APPLICATIONS ·Low speed switching industrial use ·Low frequency power amplifier PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter .

  2SB1098   2SB1098







PNP Transistor

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low speed switching industrial ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature -100 V -100 V -7 V -5 A -8 A -0.5 A 2 W 20 150 ℃ -55~150 ℃ 2SB1098 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1098 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -100μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -3mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE -1 DC Current Gain IC= -3A; VCE= -2V hFE -2 DC Current Gain IC= -5A; VCE= -2V MIN TYP. MAX UNIT -100 V -100 V -1.5 V -2.0 V -10 μA .


2020-09-27 : MJE5170    2SB547    2SB434    2SB1098    2SB508    2SB515    2SB506    2SA2223    2SA2063    2SA1932   


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