2SB1097

isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD1588 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Pulse -15 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.5 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -1V hFE-2 DC Current Gain IC= -5A; VCE= -1V  hFE-1 Classifications M L K 40-80 60-120 100-200 2SB1097 MIN TYP. MAX UNIT -0.5 V -1.5 V -10 μA -10 μA 40 200 20 NOTICE： ISC reserves the rights to make changes...