2SB1091

2SB1091 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 3.5 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings –60 –60 –7 –8 –12 40 150 –55 to +150 Unit V V V A A W °C °C 2SB1091 Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 –7 — — 1000 — — — — — — — Typ — — — — — — — — — 1.0 2.5 0.5 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 — — — V V V V µs µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –60 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB1 = –IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse Test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) –20 –10 Collector Current IC (A) –5 –2 Area of Safe Operation iC ...