2SB1072L

2SB1072(L), 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 ID 3 kΩ (Typ) 0.4 kΩ (Typ) 3 S Type 3 L Type 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current C to E diode forward current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC ID* 1 Rating –100 –80 –7 –4 4 –8 20 150 –55 to +150 Unit V V V A A A W °C °C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta = 25°C) Item Symbol Min –80 –7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.5 1.5 1.0 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 — — — V V V V V µs µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –80 V, IE = 0 VCE = –60 V, RBE = ∞ VCE = –3 V, IC = –2 A*1 I C = –2 A, IB = –4 mA*1 I C = –4 A, IB = –40 mA*1 I C = –2 A, IB = –4 mA*1 I C = –4 A, IB = –40 mA*1 I D = 4 A*1 I C = –2 A, IB1 = –IB2 = –4 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(s...