2SB1067
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1067
Micro-Moter Drive, Hammer D...
2SB1067
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1067
Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Industrial Applications Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) Low saturation
voltage: VCE (sat) = −1.5 V (max)
(IC = −1 A, IB = −1 mA)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−80 −80 −8 −2 −0.5 1.5 10 150 −55 to 150
V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω EMITTER
1 2006-11-21
Electrical Characteristi...