Transistor
2SB1050
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
...
Transistor
2SB1050
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.4±0.2 2.0±0.2 3.5±0.1
0.85
(Ta=25˚C)
Ratings –30 –20 –7 –8 –5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO IEBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz
*2
min
typ
1.25±0.05
s Absolute Maximum Ratings
0.55±0.1
0.45±0.05
max –100 –100
4.1±0.2
Low collector to emitter saturation
voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed ...