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2SB1016 Datasheet

Part Number 2SB1016
Manufacturers Toshiba
Logo Toshiba
Description SILICON PNP TRANSISTOR
Datasheet 2SB1016 Datasheet2SB1016 Datasheet (PDF)

: SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperat.

  2SB1016   2SB1016






Part Number 2SB1016
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1016 Datasheet2SB1016 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base.

  2SB1016   2SB1016







Part Number 2SB1016
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1016 Datasheet2SB1016 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1407 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Vo.

  2SB1016   2SB1016







SILICON PNP TRANSISTOR

: SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO Vebo ic IB PC T j T stg RATING -100 -100 -5 -5 -0.5 30 150 -55-150 UNIT V V V A A W °C °C Unit in mm 10.3MAX 7.0 03.2±O.2 /. l~T"~l 13J k ! r 3n :~ ci <1 o s to ! - 1 1.4 + 125 0.76- 11 5 ' il .! 4 1" M S 2.54±0.25 mo 2.54±025 1 < +1 to c5 y -n i K;1 1. BASE 2. COLLECTOR 3. EMITTER JEDEC - EIAJ - TOSHIBA 2-10 LI A Weight : 2.1g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION .


2018-07-17 : 2SB503A    2SB596    2SC3235    2SC3051    2SA816    2SA739    2SA962A    2SA968    RCA3441    RCA6263   


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