Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2S...
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO
(Ta=25˚C)
Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V
45°
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0–0.20
0.4±0.04
emitter
voltage 2SB766A Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package
marking
Marking symbol :
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
A(2SB766) B(2SB766A)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage 2SB766 2SB766A 2SB766 2SB766A
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA*2 VCE = –5V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –5 85 50 – 0.2 – 0.85 200 20
*2
min
typ
max – 0.1
Unit µA V
Emitter to base
voltage Forward current transfer ratio Collector t...