2SA965

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA965 Power Amplifier Applications Driver-Stage Amplifier Applications 2SA965 Unit: mm Complementary to 2SC2235. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB -80 mA Collector power dissipation PC 900 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC TO-92MOD Note1: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.36 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base...