isc Silicon PNP Power Transistor
2SA957
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·Good ...
isc Silicon PNP Power Transistor
2SA957
DESCRIPTION ·Collector-Emitter Breakdown
Voltage
: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
-150
V
VCEO Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-2
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -25mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -0.7A; IB= -70mA
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -0.7A; VCE= -10V
fT
Current-Gain—Bandwidth Product
IE= 0.2A; VCE= -12V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -1A, RL= 20Ω, IB1= -IB2= -0.1A, VCC= -20V
2SA957
MIN TYP. MAX UNIT
-150
V
-1.5 V
-100 μA
-1.0 mA
40
20
MHz
0.4
μs
1.5
μs
0.5
μs
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