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2SA950 Datasheet

Part Number 2SA950
Manufacturers KOO CHIN
Logo KOO CHIN
Description PNP Transistor
Datasheet 2SA950 Datasheet2SA950 Datasheet (PDF)

2SA950 TRANSISTOR (PNP) TO-92 FEATURES y 1W output applications y complementary to 2SC2120 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -0.8 PC Collector Power Dissipation 0.6 Tj Junction Temperature 150 Tstg Storage Temperature -55 to +150 Units V V V A W ℃ ℃ 1.EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS .

  2SA950   2SA950






Part Number 2SA950
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TRANSISTOR
Datasheet 2SA950 Datasheet2SA950 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 2SA950 Audio Power Amplifier Applications Unit: mm · High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -800 -160 600 150 .

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Part Number 2SA950
Manufacturers SeCoS
Logo SeCoS
Description PNP Transistor
Datasheet 2SA950 Datasheet2SA950 Datasheet (PDF)

Elektronische Bauelemente 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  1W output applications  Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product-Rank 2SA950-O 2SA950-Y Range 100-200 160-320 GH J AD B K E CF TO-92 Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.3.

  2SA950   2SA950







Part Number 2SA950
Manufacturers DC COMPONENTS
Logo DC COMPONENTS
Description PNP Transistor
Datasheet 2SA950 Datasheet2SA950 Datasheet (PDF)

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA950 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -35 -30 -5 -800 60.

  2SA950   2SA950







Part Number 2SA950
Manufacturers SEMTECH
Logo SEMTECH
Description PNP Transistor
Datasheet 2SA950 Datasheet2SA950 Datasheet (PDF)

ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a=25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Tem.

  2SA950   2SA950







Part Number 2SA950
Manufacturers Bluecolour
Logo Bluecolour
Description PNP Silicon Transistor
Datasheet 2SA950 Datasheet2SA950 Datasheet (PDF)

2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta=25oC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collecto.

  2SA950   2SA950







PNP Transistor

2SA950 TRANSISTOR (PNP) TO-92 FEATURES y 1W output applications y complementary to 2SC2120 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -0.8 PC Collector Power Dissipation 0.6 Tj Junction Temperature 150 Tstg Storage Temperature -55 to +150 Units V V V A W ℃ ℃ 1.EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Emitter-base voltage Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE Cob Test conditions IC= -0.1mA , IE=0 IC= -10mA , IB=0 IE= -0.1mA, IC=0 VCB= -35V, IE=0 VEB= -5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC= -700mA IC= -500mA, IB= -20mA VCE=-1V, IC=-10mA VCB=-10V,IE=0 f=1MHz MIN -35 -30 -5 100 35 -0.5 TYP 19 Transition frequency CLASSIFICATION OF hFE(1) Rank Range fT O 100-200 VCE=-5V,IC=-10mA 120 Y 160-320 123 MAX -0.1 -0.1 320 -0.7 -0.8 UNIT V V V μA μA V V pF MHz Typical Characteristics 2SA950 .


2015-04-05 : 2SA950    ADNS-5050    LX1973B    WM8233    WM8232    WM8234    F03-16PS    TCS10DLU    TCS10DPU    KME-M002C   


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