2SA921

Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25˚C) Ratings –120 –120 –5 –50 –20 250 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –2mA IC = –20mA, IB = –2mA VCB = –5V, IE = 2mA, f = 200MHz VCE = –40V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function FLAT 200 150 –120 –120 –5 180 520 – 0.6 V MHz mV min typ max –100 –1 Unit nA µA V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 hFE Rank 1 Transistor PC — Ta 500 –24 Ta=25˚C 450 –20 IB=–50µA –40µA –16 –35µA –30µ...