2SA812K

2SA812K Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage: VCEO = -50V SOT-23 3 Collector 1 Base PACKAGE DIMENSIONS Dim A 2 Emitter Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 B C D G A L 3 H K B S 2 J J K C Top View 1 L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings -60 -50 -5 -100 200 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE hFE Min. -60 -50 -5 -0.58 90 - Typ. 180 4.5 Max. -100 -100 300 -0.68 600 - Unit V V V nA nA mV V IC=-100uA IC=-1mA IE=-100uA VCB=-60V VEB=-5V Test Conditions IC=100mA, IB=10mA IC = -1mA, VCE = -6V VCE=-6V, IC=-1mA www.DataSheet4U.com f T MHz pF VCE=-6V, IC=-10mA VCB = -10V, f = 1 MHz Cob CLASSIFICATION OF hFE Rank Range Marking P 90 - 180 M4 Y 135 - 270 M5 G 200 - 400 M6 B 300 - 600 M7 01-June-2002 Rev. A Page 1 of 2 2SA812K Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES ...