2SA778

2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA778(K), 2SA778A(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA778(K) –150 –150 –5 –50 200 150 –55 to +150 2SA778A(K) –180 –180 –5 –50 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA778(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CER I CBO Min Typ Max — — –1.0 — –1.0 — –1.0 2SA778A(K) Min Typ Max — — — –1.0 –1.0 200 –1.0 V V pF MHz ns µs µs Unit V V µA µA µA Test conditions I C = –50 µA, IE = 0 I C = –50 µA, RBE = 30 kΩ VCB = –100 V, IE = 0 VCB = –150 V, IE = 0 VEB = –5 V, IC = 0 VCE = –3 V, I E = –15 mA I C = –15 mA, I B = –1 mA I C = –15 mA, I B = –1 mA VCB = –10 V, IE = 0, f = 1 MHz VCE = –3 V, I C = –15 mA VCC = –10.3 V I C = 10 IB1 = –10 I B2 = –10 mA VCC = –10 V, I C =–17 mA IB1 = –1mA, I B2 = –12 mA –150 — –150 — — — — — — 100 –0.3 –180 — –180 — — — — 40 — — — — — — — — — — 100 –0.3 Emitter cutoff current I EBO — 30 — — — — — — — DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance VCE(sat) VBE(sat) Cob –0.77 ...