Transistor
2SA777
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SC1509
Uni...
Transistor
2SA777
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SC1509
Unit: mm
5.9± 0.2 4.9± 0.2
q q
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –80 –80 –5 –1 – 0.5 750 150 –55 ~ +150
Unit V V V A A mW ˚C ˚C
0.45–0.1 1.27
+0.2
13.5± 0.5
s Absolute Maximum Ratings
(Ta=25˚C)
2.54± 0.15
0.7–0.2
+0.3
High collector to emitter
voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.
0.7± 0.1
8.6± 0.2
s Features
0.45–0.1 1.27
+0.2
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*
Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 100MHz VCB = –10V, IE = 0, f = 1MHz
min
typ
3.2
1
2
3
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
max – 0.1
Unit µA V V V
–80 –80 –5 90 50 100 – 0.2 – 0.85 120 ...