2SA719

Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q Complementary pair with 2SC1317 and 2SC1318. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA719 2SA720 2SA719 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1 –500 625 150 –55 ~ +150 Unit V 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SA720 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA mW ˚C ˚C 2.54±0.15 1 2 3 2.3±0.2 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h (Ta=25˚C) Symbol ICBO Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –10mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –5 85 40 – 0.35 –1.1 200 6 15 – 0.6 –1.5 V V MHz pF 340 min typ max – 0.1 Unit µA V 2SA719 2SA720 2SA719 2SA720 VCBO VCEO VEBO hFE1 hFE...