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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA699 2SA699A
DESCR...
www.DataSheet4U.net
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA699 2SA699A
DESCRIPTION ·With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER 2SA699 VCBO Collector-base
voltage 2SA699A 2SA699 VCEO Collector-emitter
voltage 2SA699A VEBO IC ICM IB
B
CONDITIONS
VALUE -40
UNIT
Open emitter -50 -32 Open base -40 Open collector -5 -2 -3 -0.6 TC=25℃ 10 150 -55~150
V
V
Emitter-base
voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature
V A A A W ℃ ℃
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation
voltage Base-emitter saturation
voltage 2SA699 IC=-1mA;IE=0 2SA699A 2SA699 IC=-10mA; IB=0 2SA699A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=-20V; IE=0 VCE=-12V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0; VCB=-5V;f=1MHz IE=0.5A ; VCB=-5V CONDITIONS IC=-1.5A ;IB=-0.15A IC=-2A ;IB=-0.2 A
B
2SA699 2SA699A
MIN
TYP. -0.4
MAX -1.0 -1.5
UNIT V V
V(BR)CBO
Collector-base breakdown
voltage
-40 V -50 -32 V -...