2SA683 / 2SA684
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplification and driver amplification
T...
2SA683 / 2SA684
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplification and driver amplification
The transistor is subdivided into three group, Q, R and S according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base
Voltage
Collector Emitter
Voltage Emitter Base
Voltage Collector Current Peak Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
2SA683 2SA684 2SA683 2SA684
Symbol
-VCBO
-VCEO -VEBO
-IC -ICP PC Tj Tstg
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Value 30 40 25 30 5
1
1.5
1
150
- 55 to + 150
Unit V
V V A A W OC OC
Characteristics at Ta = 25 OC Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 10 V, -IC = 500 mA
Current Gain Group Q hFE
85
- 170 -
R hFE
120
-
240
-
S hFE
170
-
340
-
at -VCE = 5 V, -IC = 1 A
hFE 50
-
-
-
Collector Base Cu...
