2SA652

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Contunuous Collector Current IC= -1A ·Power DissipationPC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA652 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.2A; VCE= -5V COB Collector Output Capacitance IE=0; VCB= -5V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -10V 2SA652 MIN TYP. MAX UNIT -100 V -150 V -1.5 V -2.0 V ...