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2SA2207 Datasheet

Part Number 2SA2207
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA2207 Datasheet2SA2207 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0233 2SA2207 SANYO Semiconductors DATA SHEET 2SA2207 Applications • PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulators, drive circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Volta.

  2SA2207   2SA2207






Part Number 2SA2209
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA2207 Datasheet2SA2209 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0235 2SA2209 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2209 Applications • 50V / 15A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltag.

  2SA2207   2SA2207







Part Number 2SA2206
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet 2SA2207 Datasheet2SA2206 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Power Switching Applications 2SA2206 Unit: mm Low collector emitter saturation voltage : VCE (sat) = -0.5 V (max) (IC = -1A) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2.

  2SA2207   2SA2207







Part Number 2SA2205
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet 2SA2207 Datasheet2SA2205 Datasheet (PDF)

Ordering number : ENA0544A 2SA2205 Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA http://onsemi.com Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • High allowable power dissipation • Large current capacity • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage .

  2SA2207   2SA2207







Part Number 2SA2205
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA2207 Datasheet2SA2205 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0544 2SA2205 SANYO Semiconductors DATA SHEET 2SA2205 Applications • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter.

  2SA2207   2SA2207







PNP Epitaxial Planar Silicon Transistor

www.DataSheet4U.com Ordering number : ENA0233 2SA2207 SANYO Semiconductors DATA SHEET 2SA2207 Applications • PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulators, drive circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 --50 --6 --13 --15 --2 1 20 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--270mA VCE=-2V, IC=--8.1A VCE=-5V, IC=--700mA VCB=-10V, f=1MHz 200 50 110 100 MHz pF Ratings min typ max --10 --10 500 Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can b.


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