2SA2166

2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION www.datasheet4u.com OUTLINE DRAWING 2.5 0.5 1.5 0.5 Unit：mm ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor designed with high collector current, low VCE（sat）. ① 2.90 1.90 FEATURE ●High collector current IC（MAX）=-500mA ●Low collector to emitter saturation voltage VCE（sat）<-0.4Vmax(IC=-150mA、IB=-15mA） 0.95 0.95 ③ ② 0～0.1 1.1 APPLICATION For switching application, small type motor drive application. Notice: MAXIMUM RATINGS（Ta=25℃） VCEO VCBO VEBO IC PC Tj Tstg Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature -60 -60 -5 -500 200 150 -55～150 V V V mA mW ℃ ℃ The dimension without tolerance represent central value. TERMINAL CONNECTOR ①：BASE EIAJ：SC-59 ②：EMITTER JEDEC：TO-236 ③：COLLECTOR Resemblance MARKING Type Name 0.8 A ・W ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO hFE VCE（sat） VBE（sat） fT Cob Parameter C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage B to E saturation voltage Gain band width product Collector output capacitance Test condition IC=-1mA、IB=0 IC=-10uA、IE=0 IE=-10uA、IC=0 VCB=-50V、IE=0 VEB=-3V、IC=0 IC=-150mA、VCE=-10V IC=-150mA、IB=-15mA IC=-150mA、IB=-15mA IE=50mA、VCE...