www.DataSheet4U.com
Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
0.33+0.05 –0...
www.DataSheet4U.com
Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
0.33+0.05 –0.02
Unit: mm
0.10+0.05 –0.02
Features
High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
3 0.15 min. 0.15 max. 0.80±0.05 1.20±0.05 0.52±0.03 5° 0 to 0.01 0.15 min.
0.23+0.05 –0.02
1
2
(0.40) (0.40) 0.80±0.05 1.20±0.05
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating –30 –20 –5 –30 100 125 –55 to +125 Unit V V V mA mW °C °C
1: Base 2: Emitter 3: Collector
5°
SSSMini3-F1 Package
Marking Symbol : E
Electrical Characteristics Ta = 25°C±3°C
Parameter Base-emitter
voltage Collector-base cutoff current (Emitter open) Collector-emitter cut-off current (Base open) Emitter-base cut-off current (Collector open) Forward current transfer ratio Collector-emitter saturation
voltage Transition frequency Noise figure Reverse transfer impedance Common-emitter reverse transfer capacitance Symbol VBE ICBO ICEO IEBO hFE VCE(sat) fT NF Zrb Cre
DataSheet4U.com
Conditions VCE = –10 V, IC = –1 mA VCB = –10 V, IE = 0 VCE = –20 V, IB = 0 VEB = –5 V, IC = 0 VCB = –10 V, IE = 1 mA IC = –10 mA, IB = –1 mA VCB = –10 V, IE = 1 mA, f = 200 MHz VCB = –10...