2SA2058

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = −0.2 A) Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating −20 −10 −7 −1.5 −2.5 −150 500 750 150 −55 to 150 Unit V V V A mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1A Weight: 0.01 g (typ.) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = −20 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.2 A VCE = −2 V, IC = −0.6 A IC = −0.6 A, IB = −20 mA IC = −0.6 A, IB = −20 mA VCB = −10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC ∼ − −6 V, RL = 10 Ω −IB1 = IB2 = −20 mA Min   −10 2...