2SA2057

Power Transistors 2SA2057 Silicon PNP epitaxial planar type Unit: mm Power supply for audio & visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) Superior forward current transfer ratio hFE linearity TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 15.0±0.5 9.9±0.3 4.6±0.2 2.9±0.2 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −60 −60 −6 −3 −6 20 2.0 150 −55 to +150 °C °C Unit V V V A A W 1 2 2.54±0.30 5.08±0.50 3 1 : Base 2 : Collector 3 : Emitter TO-220D-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Stora...