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2SA2049 Datasheet

Part Number 2SA2049
Manufacturers Rohm
Logo Rohm
Description MEDIUM POWER TRANSISTOR
Datasheet 2SA2049 Datasheet2SA2049 Datasheet (PDF)

Transistor 2SA2049 Medium power transistor (−30V, −2.0A) 2SA2049 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2.0A) 2) Low saturation voltage, typically (Typ. : −250mV at IC = −1.0A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5731 !Applications Small signal low frequency amplifier High speed switching !External dimensions (Units : mm) MPT3 4.0 1.0 2.5 (1) (2) (3) 0.5 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 (1)B.

  2SA2049   2SA2049






Part Number 2SA2048K
Manufacturers Rohm
Logo Rohm
Description MEDIUM POWER TRANSISTOR
Datasheet 2SA2049 Datasheet2SA2048K Datasheet (PDF)

2SA2048K Transistor Medium power transistor (−30V, −1.0A) 2SA2048K !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730K !External dimensions (Units : mm) 0.95 0.95 1.9 0.8 1.1 SMT3 0.4 (3) (1) 1.6 2.8 0.15 (1) Emitter (2) Base (3) Collector 0.3Min. !Applications Small signal low frequency amplifier Hig.

  2SA2049   2SA2049







Part Number 2SA2048
Manufacturers LZG
Logo LZG
Description SILICON PNP TRANSISTOR
Datasheet 2SA2049 Datasheet2SA2048 Datasheet (PDF)

2SA2048(3CG2048) PNP /SILICON PNP RANSISTOR :,。 Purpose: Small signal low frequency amplifier, high speed switching. :,, 2SC5730(3DG5730)。 Features: High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -6.0 V IC -1.0 A ICP -2.0 A PC 500 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob ton toff .

  2SA2049   2SA2049







Part Number 2SA2048
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet 2SA2049 Datasheet2SA2048 Datasheet (PDF)

2SA2048 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features ,, 2SC5730 。 High speed switching, low saturation voltage, complements the 2SC5730.  / Applications ,。 Small signal low frequency amplifier, high speed switching. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 120~270 R 180~390 Marking HULQ HULR .

  2SA2049   2SA2049







Part Number 2SA2048
Manufacturers Rohm
Logo Rohm
Description Medium power transistor
Datasheet 2SA2049 Datasheet2SA2048 Datasheet (PDF)

Transistor 2SA2048 Medium power transistor (−30V, −1.0A) 2SA2048 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 !Applications Small signal low frequency amplifier High speed switching !External dimensions (Units : mm) TSMT3 2.8 1.6 (3) 0.4 2.9 0.16 1.9 0.95 0.95 (2) (1) 0 0.1 0.7 0.85 1.0MAX (.

  2SA2049   2SA2049







MEDIUM POWER TRANSISTOR

Transistor 2SA2049 Medium power transistor (−30V, −2.0A) 2SA2049 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2.0A) 2) Low saturation voltage, typically (Typ. : −250mV at IC = −1.0A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5731 !Applications Small signal low frequency amplifier High speed switching !External dimensions (Units : mm) MPT3 4.0 1.0 2.5 (1) (2) (3) 0.5 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 (1)Base (2)Collector (3)Emitter Each lead has same dimensions Abbreviated symbol : UX !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Type Package Code Basic ordering unit (pieces) 2SA2049 Taping T100 1000 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Power dissipation PC Junction temperature Tj Range of storage temperature Tstg ∗1 Pw=100ms *2 Mounted on a 40×40×0.7 (mm) ceramic substrate Limits −30 −30 −6 −2.0 −4.0 500 2.0 150 −55~+150 Unit V V V A A ∗1 mW W ∗2 °C °C 1/3 Transistor 2SA2049 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −30 − − V IC= −100µA Collector-emitter breakdown voltage BVCEO −30 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −100µA Collector cut-off current ICBO − − −1.0 µA VCB= −20V Emitter cut-o.


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