isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2039
DESCRIPTION ·Large current capacitance ·High-speed swi...
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2039
DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC5706 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor
drivers,flash
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-50
V
VCEO
Collector-Emitter
Voltage
-50
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-7.5
A
15 W
0.8
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2039
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= -1.0A; IB= -50mA
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= -2.0A; IB= -100mA
VBE(sat) Base-Emitter Saturation
Voltage
IC= -2.0A; IB= -100mA
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Em...