2SA2028

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SA2028 Silicon PNP epitaxial planar type Productnnua to 0.1 0.9±0.1 0.9–+00..12 For DC-DC converter ■ Features Low collector-emitter saturation voltage VCE(sat) High-speed switching S-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg −20 −20 −5 −1 −3 150 150 −55 to +125 Unit V V V A A mW °C °C 1.25±0.10lifecycle stage.endce/ 2.1±0.1 5˚ 0.2±0.1 0.3+–00..01 3 (0.425) Unit: mm 0.15+–00..0150 12 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: AT ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −2 V, IC = −100 mA IC = −200 mA, IB = −10 mA VCB = −10 V, IE...