Ordering number:ENN6404
PNP Epitaxial Planar Silicon Transistor
2SA2025
DC/DC Converter Applications
Applications
· Re...
Ordering number:ENN6404
PNP Epitaxial Planar Silicon Transistor
2SA2025
DC/DC Converter Applications
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation
voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to
be made small and slim. · High allowable power dissipation.
Package Dimensions
unit:mm 2033A
[2SA2025]
4.0 2.2
0.4 0.5
0.4 0.4
0.6 1.8
15.0 3.0
123 1.3 1.3
0.7 0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation
Voltage Base-to-Emitter Saturation
Voltage
Symbol
Conditions
ICBO IEBO hFE
fT Cob
VCE(sat) VBE(sat)
VCB=–12V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–500mA VCB=–10V, f=1MHz IC=–1.5A, IB=–30mA IC=–1.5A, IB=–30mA
3.0 3.8nom
1 : Emitter 2 : Collector 3 : Base SANYO : SPA
Ratings –15 –12 –5 –3 –5
–600 0.55 150 –55 to +150
Unit V V V A A mA W ˚C ˚C
Ratings min typ max
Unit
–0.1 µA
–0.1 µA
200 560
280 MHz
36 pF
–110 –165 mV
–0.85 –...