2SA2021

Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 I Features High foward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.23+0.05 –0.02 1 2 I Absolute Maximum Ratings Ta = 25°C Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg −60 −50 −7 −200 −100 100 125 −55 to +125 V V V mA mA mW °C °C 0 to 0.01 Parameter Symbol Rating Unit 1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin) Marking Symbol: 3E I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency VCBO VCEO VEBO hFE VCE(sat) Cob fT Conditions VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 IC = −10 µA, IE = 0 IC = −100 µA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCB = −10 V, IE = 0, f = 1 MHz VCB = −10 V, IE = 1 mA, f = 200 MHz −60 −50 −7 180 − 0.3 2.7 80 390 − 0.5 V pF MHz Min Typ Max − 0.1 −100 Unit µA µA V V V 0....