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2SA2002 Datasheet

Part Number 2SA2002
Manufacturers IDC
Logo IDC
Description Silicon PNP Epitaxial Type Transistor
Datasheet 2SA2002 Datasheet2SA2002 Datasheet (PDF)

ÉVÉäÉRÉì PNPÉGÉsÉ^ÉLÉVÉ@Éãå`ÅiÉtÉåÅ|ÉÄÉ^ÉCÉvÅj äTÅ@óv 2SA2002ÇÕÅAé˜éâïïé~å`ÉVÉäÉRÉì PNPÉGÉsÉ^ÉLÉVÉ@Éãå` ÉgÉâÉìÉWÉXÉ^Ç≈Ç∑ÅB∫⁄∏¿ìdó¨Ç™ëÂÇ´Ç≠ VCE(sat)Ç™è¨Ç≥Ç≠ÅA ê›åvÅAêªë¢Ç≥ÇÍǃǮÇËÇ‹Ç∑ÇÃÇ≈ÅAÿ⁄ -ƒfi◊≤ÃfiÅAìdåπÇ‚ÅA 20Å` 40WèoóÕÇÃí·é¸îgìdóÕëùïùäÌÇÃfi◊≤ÃfiópÇ∆ǵǃÅA 2SC5485 Ç∆ÉRÉìÉvÉäÉÅÉìÉ^ÉäÇ≈Ç∑ÅB äOÅ@å`Å@ê} íPà :mm 2SA2002 ëÂìdó¨ÉhÉâÉC 4.0 ì¡Å@í∑ ÅE∫⁄∏¿ìdó¨Ç™ëÂÇ´Ç¢ ICM=-1000mA ÅEÇu CE(sat)Ç™è¨Ç≥Ç¢ VCE(sat) =-0.25V typ ÅEíºó¨ìdó¨ëùïùó¶ÇÃíºê¸ê´Ç™ÇÊÇ¢ ÅEóòìæë—àÊïùêœÇ™çÇÇ¢ fT= 180MHz typ ÅE∫⁄∏¿ëπé∏Ç™ëÂÇ.

  2SA2002   2SA2002






Part Number 2SA2009
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planer type Transistor
Datasheet 2SA2002 Datasheet2SA2009 Datasheet (PDF)

Transistors 2SA2009 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency high breakdown voltage amplification I Features • High collector to emitter voltage VCEO • Low noise voltage NV 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction tempera.

  2SA2002   2SA2002







Part Number 2SA2006
Manufacturers ROHM
Logo ROHM
Description High-speed Switching Transistor
Datasheet 2SA2002 Datasheet2SA2006 Datasheet (PDF)

Transistors 2SA1952 / 2SA1906 / 2SA2006 High-speed Switching Transistor (−60V, −5A) 2SA1952 / 2SA1906 / 2SA2006 !Features 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103 / 2SC5525. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SA1952 2SA1906 2SA200.

  2SA2002   2SA2002







Part Number 2SA2005
Manufacturers Rohm
Logo Rohm
Description Transistors
Datasheet 2SA2002 Datasheet2SA2005 Datasheet (PDF)

www.DataSheet4U.com 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation ( 160V, 1.5A) 2SA2005 Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm) ÌÑóîîðÚÒ ïðòð íòî ìòë îòè Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. øï÷Þ¿-» øî÷ݱ´´»½¬±® øí÷Û³·¬¬»® ïòî ïòí ðòè îòëì øï÷ øî÷ øí÷ îòëì ðòé.

  2SA2002   2SA2002







Part Number 2SA2004
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SA2002 Datasheet2SA2004 Datasheet (PDF)

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2004 DESCRIPTION ·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Curr.

  2SA2002   2SA2002







Part Number 2SA2004
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA2002 Datasheet2SA2004 Datasheet (PDF)

Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High-speed switching 15.0±0.5 I Features φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitt.

  2SA2002   2SA2002







Silicon PNP Epitaxial Type Transistor

ÉVÉäÉRÉì PNPÉGÉsÉ^ÉLÉVÉ@Éãå`ÅiÉtÉåÅ|ÉÄÉ^ÉCÉvÅj äTÅ@óv 2SA2002ÇÕÅAé˜éâïïé~å`ÉVÉäÉRÉì PNPÉGÉsÉ^ÉLÉVÉ@Éãå` ÉgÉâÉìÉWÉXÉ^Ç≈Ç∑ÅB∫⁄∏¿ìdó¨Ç™ëÂÇ´Ç≠ VCE(sat)Ç™è¨Ç≥Ç≠ÅA ê›åvÅAêªë¢Ç≥ÇÍǃǮÇËÇ‹Ç∑ÇÃÇ≈ÅAÿ⁄ -ƒfi◊≤ÃfiÅAìdåπÇ‚ÅA 20Å` 40WèoóÕÇÃí·é¸îgìdóÕëùïùäÌÇÃfi◊≤ÃfiópÇ∆ǵǃÅA 2SC5485 Ç∆ÉRÉìÉvÉäÉÅÉìÉ^ÉäÇ≈Ç∑ÅB äOÅ@å`Å@ê} íPà :mm 2SA2002 ëÂìdó¨ÉhÉâÉC 4.0 ì¡Å@í∑ ÅE∫⁄∏¿ìdó¨Ç™ëÂÇ´Ç¢ ICM=-1000mA ÅEÇu CE(sat)Ç™è¨Ç≥Ç¢ VCE(sat) =-0.25V typ ÅEíºó¨ìdó¨ëùïùó¶ÇÃíºê¸ê´Ç™ÇÊÇ¢ ÅEóòìæë—àÊïùêœÇ™çÇÇ¢ fT= 180MHz typ ÅE∫⁄∏¿ëπé∏Ç™ëÂÇ´Ç¢ PC= 600mW ópÅ@ìr è¨å`” -¿ƒfi◊≤ÃfiÅAÿ⁄ -ƒfi◊≤ÃfiÅAìdåπóp 1 2 3 0.1 0.45 1.271.27 1 2 3 ìdã…ê⁄ë± : ÉGÉ~ÉbÉ^ : ÉRÉåÉNÉ^ : ÉxÅ|ÉX EIAJ : JEDEC : ç≈ëÂíËäi (Ta=25Åé ) ãLÅ@çÜ çÄÅ@Å@ñ⁄ VCBO ÉRÉåÉNÉ^ÅEÉxÅ|ÉXä‘ìdà≥ ÉGÉ~ÉbÉ^ÅEÉxÅ|ÉXä‘ìdà≥ VEBO VCEO I CM IC PC Tj Tstg ÉRÉåÉNÉ^ÅEÉGÉ~ÉbÉ^ä‘ìdà≥ ÇπÇÒì™ÉRÉåÉNÉ^ìdó¨ ÉRÉåÉNÉ^ìdó¨ ÉRÉåÉNÉ^ëπé∏ ê⁄çáïîâ∑ìx ï¤ë∂â∑ìx (Ta=25Åé ) ì¡ê´íl ãLÅ@çÜ V(BR)CBO V(BR)EBO V(BR)CEO I CBO I EBO hFE Åñ íËäiíl -25 -4 -20 -1000 -700 600 +150 -55~+150 íPà V V V mA mA mW Åé Åé ìdãCìIì¡ê´ çÄÅ@Å@ñ⁄ ë™íË è åè ç≈è¨ -25 -4 -20 ïWèÄ ç≈ë íPà V V V ÉA ÉA V MHz G 400Å`800 ÉRÉåÉNÉ^ÅEÉxÅ|ÉXç~ïöìdà≥ I C=-10É A, I E=0 ÉGÉ~ÉbÉ^ÅEÉxÅ|ÉXç~ïöìdà≥ I E=-10É A, I C=0 I C=-100É A, RBE=Åá ÉRÉåÉNÉ^ÅEÉGÉ~ÉbÉ^ç~ïöìdà≥ VCB=-25V, I E=0 ÉRÉåÉNÉ^ǵǷífìdó¨ ÉGÉ~ÉbÉ^ǵǷífìdó¨ VEB=-2V, I C=0 VCE=-4V, I C=-100mA íºó¨ìdó¨ëùïùó¶ ÉRÉåÉNÉ^ÅEÉGÉ~ÉbÉ^ñOòaìdà≥ I C=-500mA, I B=-25mA óòìæë—àÊïùêœ VCE=-6V, I E=10mA -1 -1 150 -0.25 180 ITEM hFE E 150Å`300 F 250Å`500 800 -0.5 VCE(sat) fT http://www..


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