DATA SHEET
Silicon Power Transistor
2SA1988
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE
DESCRIPTION
The 2SA...
DATA SHEET
Silicon Power Transistor
2SA1988
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier.
PACKAGE DIMENSIONS
15.7 MAX.
FEATURES
High
Voltage VCEO = −200 V DC Current Gain hFE = 70 to 200 TO-3P Package
1.0
φ 3.2±0.2
4.7 MAX. 1.5
20.5MAX. 5.0
4 4.5±0.2 1.0±0.2 0.6±0.1 5.45
1 19 MIN. 3.4MAX.
2
3
ORDERING INFORMATION
Type Number 2SA1988 Package MP-88
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipantion JunctionTemperature VCBO VCEO VEBO IC (DC) IC (pulse) *1 P2 *2 TJ −200 −200 −5.0 −7.0 -10 100 150 −55 to +150 *2 TC = 25 °C V V V A A W °C °C
2.2±0.2 5.45
2.8±0.1
MP-88
1.Base 2.Collector 3.Emitter 4.Fin (Collector)
Storage Tempreature Tstg *1 PW ≤ 300 µs, Duty Cycle ≤ 10 %
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation
Voltage Base Saturation
Voltage Gain Band width Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob 70 20 −0.6 −1.3 40 270 −2.0 −2.0 MIN. TYP. MAX. −50 −50 200 UNIT TEST CONDITIONS VCB = −200 V, IE = 0 VEB = −3.0 V, IC = 0 VCE = −5.0 V, IC = −1.0 A VCE = −5.0 V, IC = −3.5 A IC = −5.0 V, IE = −0.5 V IC = −5.0 V, IE = −0.5 V VCE = −5.0 V, IC = 1.0 mA VCB = −...