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2SA1986 Datasheet

Part Number 2SA1986
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1986 Datasheet2SA1986 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications 2SA1986 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1..

  2SA1986   2SA1986






Part Number 2SA1986
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Power Transistor
Datasheet 2SA1986 Datasheet2SA1986 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5358 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol.

  2SA1986   2SA1986







Part Number 2SA1986
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SA1986 Datasheet2SA1986 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Colle.

  2SA1986   2SA1986







Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications 2SA1986 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C T stg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-08-31 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collec.


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