2SA1982

Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC5346 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 0.7 4.0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. (Ta=25˚C) Ratings –150 –150 –5 –100 –50 * 0.65 max. 1.0 1.0 0.2 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Unit V V V mA mA W ˚C ˚C 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1 150 –55~+150 1.2±0.1 0.65 max. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transit...