2SA1978

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT fT = 5.5 GHz TYP. | S21e | = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA 2 PACKAGE DIMENSIONS (in milimeters) _0.2 2.8+ 0.4 +0.1 –0.05 1.5 0.65 +0.1 –0.15 High speed switching characteristics Equivalent NPN transistor is the 2SC2351. 0.95 _0.2 2.9+ Alternative of the 2SA1424. 2 0.95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Ti Tstg Rating −20 −12 −3.0 −50 200 150 −65 to +150 Unit V V 1.1 to 1.4 0.3 Marking 0.16 +0.1 –0.06 V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector Capacitance Insertion Power Gain Noise Figure Symbol ICB0 IEB0 hFE fT Cre* | S21e | NF 2 PIN CONNECTIONS 1: Emitter 2: Base 3: Collector Marking: T93 Test Conditions VCB = −10 V VEB = −2 V VCE = −10 V, IC = −15 mA VCE = −10 V, IC = −15 mA VCB = −10 V, IE = 0, f = 1 MHz VCE = −10 V, IC = −15 mA, f = 1.0 GHz VCE = −10 V, IC = −3.0 mA, f = 1 GHz MIN. TYP. 0 to 0.1 MAX. −0.1 −0.1 0.4 +0.1 –0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 1 3 Unit µA µA 20 4.0 40 5.5 0.5 100 GHz 1 pF dB 3 dB 8.0 10.0 2.0 * Mesured by a 3-terminal bridge. Emitter and Case should be connected t...