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2SA1971 Datasheet

Part Number 2SA1971
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1971 Datasheet2SA1971 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications 2SA1971 Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note 1) VCBO VCEO VEBO IC ICP IB PC −400 V −400 V −7 V −0.5 A −1 −0.25 A 500 mW 1000 Junc.

  2SA1971   2SA1971






Part Number 2SA1979UF
Manufacturers AUK corp
Logo AUK corp
Description PNP Silicon Transistor
Datasheet 2SA1971 Datasheet2SA1979UF Datasheet (PDF)

Semiconductor 2SA1979UF PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342UF Ordering Information Type NO. 2SA1979UF Marking A : hFE rank Package Code SOT-323F Outline Dimensions unit : mm 2.0~2.2 0.30~0.40 0.55~0.8 1.2~1.4 1.30 BSC 1.9~2.1 1 3 2 0.06~0.16 KST-3030-002 0~0.1 PIN Connections 1. Base 2. Emitter 3. Coll.

  2SA1971   2SA1971







Part Number 2SA1979U
Manufacturers AUK corp
Logo AUK corp
Description PNP Silicon Transistor
Datasheet 2SA1971 Datasheet2SA1979U Datasheet (PDF)

Semiconductor 2SA1979U PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342U Ordering Information Type NO. 2SA1979U Marking A : hFE rank Package Code SOT-323 Outline Dimensions unit : mm 2.0~2.2 1.2~1.3 1 1.8~2.2 1.2~1.4 3 0.2~0.4 2 0.1~0.2 0.8~1.0 0~0.1 0.1 Min. PIN Connections 1. Base 2. Emitter 3. Collector KST-30.

  2SA1971   2SA1971







Part Number 2SA1979SF
Manufacturers AUK corp
Logo AUK corp
Description PNP Silicon Transistor
Datasheet 2SA1971 Datasheet2SA1979SF Datasheet (PDF)

Semiconductor 2SA1979SF PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342SF Ordering Information Type NO. 2SA1979SF Marking AA : hFE rank Package Code SOT-23F Outline Dimensions unit : mm 2.3~2.5 1.5~1.7 1 1.90 BSC 2.8~3.0 3 2 0.35~0.45 0.1~0.2 0.8~1.0 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2063-001.

  2SA1971   2SA1971







Part Number 2SA1979S
Manufacturers LZG
Logo LZG
Description SILICON PNP TRANSISTOR
Datasheet 2SA1971 Datasheet2SA1979S Datasheet (PDF)

2SA1979S(3CG1979S) PNP /SILICON PNP TRANSISTOR :。 Purpose: Medium power amplifier applications. :,, 2SC5342S(3DG5342S)。 Features: Large IC,low VCE(sat),complementary pair with the 2SC5342S(3DG5342S). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -32 V VEBO -5.0 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-100μA IC=-1.0mA IE=-10μA VCB=-.

  2SA1971   2SA1971







Part Number 2SA1979S
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet 2SA1971 Datasheet2SA1979S Datasheet (PDF)

2SA1979S Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, 2SC5342S 。 Large IC,low VCE(sat),complementary pair with the 2SC5342S. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 70~140 Y 120~240 Marking HAAO HAAY http://www.fsbrec.com 1/6 2SA1979S R.

  2SA1971   2SA1971







Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications 2SA1971 Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note 1) VCBO VCEO VEBO IC ICP IB PC −400 V −400 V −7 V −0.5 A −1 −0.25 A 500 mW 1000 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate 250 mm2 × 0.8 t JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1995-07 1 2013-11-01 2SA1971 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage.


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