isc Silicon PNP Power Transistor
2SA1964
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Goo...
isc Silicon PNP Power Transistor
2SA1964
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-160
V
VCEO
Collector-Emitter
Voltage
-160
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-1.5
A
2 W
20
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website: www.iscsemi.com
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isc Silicon PNP Power Transistor
2SA1964
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -1A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.1A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.2A; VCE= -10V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
hFE Classifications
D
E
60-120 100-200
MIN ...