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2SA1963 Datasheet

Part Number 2SA1963
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA1963 Datasheet2SA1963 Datasheet (PDF)

Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features · Low noise : NF=1.5dB typ (f=1GHz). · High gain : | S2le |2=9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ. Package Dimensions unit:mm 2018B [2SA1963] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation.

  2SA1963   2SA1963






Part Number 2SA1969
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA1963 Datasheet2SA1969 Datasheet (PDF)

Ordering number:5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,MediumCurrent Ultrahigh-Speed Switching Applications Features · High fT (fT=1.7GHz typ). · Large current capacity (IC=–400mA). Package Dimensions unit:mm 2038A [2SA1969] 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (P.

  2SA1963   2SA1963







Part Number 2SA1968
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SA1963 Datasheet2SA1968 Datasheet (PDF)

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  2SA1963   2SA1963







Part Number 2SA1967
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SA1963 Datasheet2SA1967 Datasheet (PDF)

Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–900V). · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Col.

  2SA1963   2SA1963







Part Number 2SA1965-S
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Transistor
Datasheet 2SA1963 Datasheet2SA1965-S Datasheet (PDF)

Ordering number : ENA1085 2SA1965-S SANYO Semiconductors DATA SHEET 2SA1965-S PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector.

  2SA1963   2SA1963







Part Number 2SA1965
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA1963 Datasheet2SA1965 Datasheet (PDF)

Ordering number:5031 PNP Epitaxial Planar Silicon Transistor 2SA1965 Muting Circuit Applications Features · Very small-sized package permitting 2SA1965applied sets to be made small and slim. · Small output capacitance. · Low collectot-to-emitter saturation voltage. · Small ON resistance. Package Dimensions unit:mm 2106A [2SA1965] 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-.

  2SA1963   2SA1963







PNP Epitaxial Planar Silicon Transistor

Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features · Low noise : NF=1.5dB typ (f=1GHz). · High gain : | S2le |2=9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ. Package Dimensions unit:mm 2018B [2SA1963] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain ICBO IEBO hFE fT Cob Cre | S2le |2(1) | S2le |2(2) Noise Figure NF * : The 2SA1963 is classified by 10mA hFE as follows : 20 1 50 40 2 80 60 VCB=–10V, IE=0 VEB=–1V, IC=0 VCE=–5V, IC=–10mA VCE=–5V, IC=–10mA VCB=–10V, f=1MHz VCB=–10V, f=1MHz VCE=–5V, IC=–10mA, f=1GHz VCE=–2V, IC=–3mA, f=1GHz VCE=–5V, IC=–5mA, f=1GHz Marking : MS 3 120 hFE ranks : 1, 2, 3 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings –12 –8 –2 –50 200 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 20* 35 0.8 0.55 79 6.5 1.5 max –1.0 –1.0 120* 1.3 3.0 Unit µA µA GHz pF pF dB dB dB Any and all SANYO products described or contained herein do not have specifications tha.


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