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2SA1955

Toshiba Semiconductor

Silicon PNP Epitaxial Type Transistor

Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application 2SA1955 Unit: mm · Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA · Large collector current: IC = −400 mA (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-base volta...


Toshiba Semiconductor

2SA1955

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