2SA1954

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application 2SA1954 Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −12 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Base current IB −50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation vo...