DatasheetsPDF.com

2SA1926

Part Number	2SA1926
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1926 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1926 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1926 Power Amplifier Applications Power Switching Applications 2SA1926 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.
17 V (max) (IC = −1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −8 V Collector current IC −3 A Base current IB −1 A Collector power dissipation Junction temperature Storage temperature range PC 1000 mW Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.
g.
the application of TOSHIBA 2-7D101A high temperat...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)