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2SA1924

Part Number	2SA1924
Manufacturer	Toshiba Semiconductor
Description	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications 2SA1924 Unit: mm • Hig...
Datasheet	2SA1924 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications 2SA1924 Unit: mm • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.
Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.
5 −1 −0.
25 1.
5 10 150 −55 to 150 Electrical Characteristics (Tc = 25°C) Unit V ...

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