2SA1907
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099)
Application : Audio and General Purpose
...
2SA1907
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
Ratings
VCBO
–80
VCEO
–80
VEBO
–6
IC
–6
IB
–3
PC
60(Tc=25°C)
Tj
150
Tstg
–55 to +150
(Ta=25°C) Unit V V V A A W °C °C
sElectrical Characteristics
(Ta=25°C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=–80V VEB=–6V IC=–50mA VCE=–4V, IC=–2A IC=–12A, IB=–0.2A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz
Ratings –10max –10max –80min 50min∗ –0.5max
20typ 150typ
Unit µA µA V
V MHz pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
–30
10
–3
–10
5
–0.3
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
0.3 0.18typ 1.10typ 0.21typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
0.8±0.2 5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 6.5g a. Part No. B C E b. Lot No.
Collector Current IC(A)
I C– V CE Characteristics (Typical)
–6
–200mA –150mA
–100mA
–5
–80mA
–4
–50mA
–3
–30mA
–20mA –2
IB=–10mA –1
0
0
–1
–2
–3
–4
Collector-Emitter
Voltage VCE(V)
Collector-Emitter Saturation
Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V) –6
Collector Current IC(A) 251˚2C5˚(CC(asCae...
