2SA1857

Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB typ (f=100MHz). · High cutoff frequency : fT=750MHz typ. · Low collector-to-emitter saturation voltage. · Complementary pair with the 2SC4400. Package Dimensions unit:mm 2059A [2SA1857] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=–12V, IE=0 Emitter Cutoff Current IEBO VEB=–2V, IC=0 DC Current Gain hFE VCE=–10V, IC=–5mA Gain-Bandwidth Product fT VCE=–10V, IC=–5mA Output Capacitance Cob VCB=–10V, f=1MHz Reverse Transfer Caspacitance Cre VCB=–10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=–10mA, IB=–1mA Power Gain PG VCE=–10V, IC=–10mA, f=100MHz * : The 2SA1857 is classified by 5mA hFE as follows : Marking : JS 60 3 120 90 4 180 135 5 270 hFE rank : 3, 4, 5 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings –15 –12 –3 –50 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 750 1.2 0.9 –0.1 25 max –0.1 –0.1 270* 1.6 –0.3 Unit µA µA MHz pF pF V dB Any and all SANYO products described or contained herein d...