2SA1850

Ordering number:EN4132 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1850/2SC4824 High Definition CRT Display Video Output Applications Applications · High Definition CRT Display Video Output Applications, Wide-Band Amplifier. Features · Adoption of FBET process. · High Gain Bandwidth product (fT=400MHz). · High breakdown voltage (VCEO=120V). · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP. · Usage of radial taping to meet automatic mounting. Package Dimensions unit:mm 2084 [2SA1850/2SC4824] ( ) : 2SA1850 E : Emitter C : Collector B : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)100mA VCE=(–)10V, IC=(–)50mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz SANYO : FLP Ratings (–)120 (–)120 (–)3 (–)200 (–)400 1.3 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 60* 20 400 (2.8) 2.1 (2.2) 1.7 max (–)0.1 (–)1.0 320* Unit µA µA MHz pF pF pF pF ...