2SA1822

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SA1822 High-Voltage Switching Applications High-Speed DC-DC Converter Application 2SA1822 Unit: mm Excellent switching times : ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = −0.3 A High collector breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −400 V Collector-emitter voltage VCEO −400 V Emitter-base voltage VEBO −7 V Collector current IC −1 A Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1822 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltag...