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2SA1795 Datasheet

Part Number 2SA1795
Manufacturers Shindengen Electric Mfg.Co.Ltd
Logo Shindengen Electric Mfg.Co.Ltd
Description Switching Power Transistor
Datasheet 2SA1795 Datasheet2SA1795 Datasheet (PDF)

SHINDENGEN Switching Power Transistor LSV Series 2SA1795 (TE5T4) -5A PNP OUTLINE DIMENSIONS Case : E-pack Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT Conditions Tc = 25℃ Ratings -55~150 150 -60 -40 -7 -5 -10 -1.5 -.

  2SA1795   2SA1795






Part Number 2SA1798
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistors
Datasheet 2SA1795 Datasheet2SA1798 Datasheet (PDF)

Ordering number:EN3709 Features · Adoption of MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. PNP Epitaxial Planar Silicon Transistors 2SA1798 20V/8A Switching Applications Package Dimensions unit:mm 2042A [2SA1798] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCE.

  2SA1795   2SA1795







Part Number 2SA1797U
Manufacturers SEMTECH
Logo SEMTECH
Description PNP Transistor
Datasheet 2SA1795 Datasheet2SA1797U Datasheet (PDF)

2SA1797U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pw = 20 ms) Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICP PC Tj Tstg Value 50 50 6 2 3 0.5 150 - 55 to + 150 Unit V V V A A W ℃ ℃ Characteristics at Ta = 25℃ Parameter DC Current Gain at -VCE = 2 V, -IC = .

  2SA1795   2SA1795







Part Number 2SA1797-Q
Manufacturers MCC
Logo MCC
Description PNP Silicon Power Transistors
Datasheet 2SA1795 Datasheet2SA1797-Q Datasheet (PDF)

2SA1797-P/2SA1797-Q Features • Complements to 2SC4672 • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) PNP Silicon Power Transistors Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 250℃/W Junction to Ambient S.

  2SA1795   2SA1795







Part Number 2SA1797-P
Manufacturers MCC
Logo MCC
Description PNP Silicon Power Transistors
Datasheet 2SA1795 Datasheet2SA1797-P Datasheet (PDF)

2SA1797-P/2SA1797-Q Features • Complements to 2SC4672 • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) PNP Silicon Power Transistors Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 250℃/W Junction to Ambient S.

  2SA1795   2SA1795







Part Number 2SA1797
Manufacturers GME
Logo GME
Description PNP Transistor
Datasheet 2SA1795 Datasheet2SA1797 Datasheet (PDF)

Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A).  Excellent DC current gain characteristics.  Complements the 2SA1797 and 2SC4672.  MSL 3 APPLICATIONS  Low frequency transistor. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SA1797 AGP/AGQ 2SA1797 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VC.

  2SA1795   2SA1795







Switching Power Transistor

SHINDENGEN Switching Power Transistor LSV Series 2SA1795 (TE5T4) -5A PNP OUTLINE DIMENSIONS Case : E-pack Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT Conditions Tc = 25℃ Ratings -55~150 150 -60 -40 -7 -5 -10 -1.5 -2 10 Ratings Min -40 Max -0.1 Max -0.1 Max -0.1 Min 70 Max -0.3 Max -1.2 Max 12.5 TYP 50 Max 0.3 Max 1.5 Max 0.5 Unit ℃ ℃ V V V A A A A W ●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current ICBO ICEO Emitter Cutoff Current IEBO DC Current Gain hFE Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance θjc Transition Frequency fT Turn on Time ton Storage Time Fall Time Conditions IC = -0.05A At rated Voltage At rated Voltage VCE = -2V, IC = -2.5A IC = -2.5A IB = -0.13A Junction to case VCE = -10V, IC = -0.5A IC = -2.5A IB1 = -0.25A, IB2 = -0.25A RL = 12Ω, VBB2 = -4V Unit V mA mA V V ℃/W MHz ts tf μs Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SA1795 hFE - I C VCE = − 2V 1000 Tc = 150°C 100°C 50°C DC Current Gain hFE 100 − 55°C − 25°C 0°C 25°C 10 -0.001 -0.01 -0.1 -1 -10 Collector Current IC [A] 2SA1795 Saturation Voltage -3 − 1A Tc.


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