Ordering number:EN3520
Features
· Adoption of MBIT process. · High breakdown voltage (VCEO≥400V). · Excellent linearity ...
Ordering number:EN3520
Features
· Adoption of MBIT process. · High breakdown
voltage (VCEO≥400V). · Excellent linearity of hFE.
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
2SA1784/2SC4644
High
Voltage Driver Applications
Package Dimensions
unit:mm 2064
[2SA17814/2SC4644]
( ) : 2SA1784
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation
Voltage
Symbol
Conditions
ICBO IEBO hFE
fT Cob Cre
VCE(sat)
VCB=(–)300V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz IC=(–)50mA, IB=(–)5mA
Base-to-Emitter Saturation
Voltage
VBE(sat) IC=(–)50mA, IB=(–)5mA
E : Emitter C : Collector B : Base
SANYO : NMP
Ratings (–)400 (–)400 (–)5 (–)200 (–)400 1 150
–55 to +150
Unit V V V mA mA W ˚C ˚C
Ratings min typ
60* 70
(5)4 (4)3
max (–)0.1 (–)0.1 200*
(–0.8) 0.6
(–)1.0
Unit
µA µA
MHz pF pF V V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely ...